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SGM2016AN Datasheet GaAs N-channel Dual-Gate MES FET

Manufacturer: Sony Semiconductor Solutions

General Description

The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

Overview

SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.

Key Features

  • Ultra-small package.
  • Low voltage operation.
  • Low noise NF = 1.2dB (typ. ) at 900MHz.
  • High gain Ga = 21dB (typ. ) at 900MHz.
  • High stability.
  • Built-in gate protection diode.