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SGM2016AN - GaAs N-channel Dual-Gate MES FET

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Sony Corporation

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SGM2016AN GaAs N-channel Dual-Gate MES FET by Sony Corporation - Datasheet Preview — Datasheet preview – SGM2016AN

Datasheet Details

Part number	SGM2016AN
Manufacturer	Sony Corporation
File Size	56.22 KB
Description	GaAs N-channel Dual-Gate MES FET
Datasheet	SGM2016AN Datasheet
Additional preview pages of the SGM2016AN datasheet.

Product details

Description

The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

Features

Ultra-small package.
Low voltage operation.
Low noise NF = 1.2dB (typ. ) at 900MHz.
High gain Ga = 21dB (typ. ) at 900MHz.
High stability.
Built-in gate protection diode.

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Other Datasheets by Sony Corporation

SGM2016AM - GaAs N-channel Dual-Gate MES FET
SGM2016AP - GaAs N-channel Dual-Gate MES FET
SGM2016M - GaAs N-channel Dual-Gate MES FET
SGM2016P - GaAs N-channel Dual-Gate MES FET
SGM2013N - GaAs N-channel Dual-Gate MES FET
SGM2014AM - GaAs N-channel Dual-Gate MES FET

Published: Apr 8, 2005 |