SGM2016AN
Description
The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
Key Features
- Ultra-small package
- Low voltage operation
- Low noise NF = 1.2dB (typ.) at 900MHz
- High gain Ga = 21dB (typ.) at 900MHz
- High stability
- Gate 1 to source voltage VG1S –5
- Gate 2 to source voltage VG2S –5
- Drain current ID 55
- Allowable power dissipation PD 100
- Channel temperature Tch 125
