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SGM2016AN - GaAs N-channel Dual-Gate MES FET

Description

The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

Features

  • Ultra-small package.
  • Low voltage operation.
  • Low noise NF = 1.2dB (typ. ) at 900MHz.
  • High gain Ga = 21dB (typ. ) at 900MHz.
  • High stability.
  • Built-in gate protection diode.

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Datasheet preview – SGM2016AN

Datasheet Details

Part number SGM2016AN
Manufacturer Sony Corporation
File Size 56.22 KB
Description GaAs N-channel Dual-Gate MES FET
Datasheet download datasheet SGM2016AN Datasheet
Additional preview pages of the SGM2016AN datasheet.

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Full PDF Text Transcription

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SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.
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