SGM2016AN Description
The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
SGM2016AN Key Features
- Ultra-small package
- Low voltage operation
- Low noise NF = 1.2dB (typ.) at 900MHz
- High gain Ga = 21dB (typ.) at 900MHz
- High stability
- Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-ch