SGM2016AN Datasheet | Sony Semiconductor Solutions

Description The SGM2016AN is an N-channel dual-gate Ga As MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features - Ultra-small package - Low voltage operation - Low noise NF = 1.2d B (typ.) at 900MHz - High gain Ga = 21d B (typ.) at 900MHz - High stability - Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure Ga As, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) - Drain to source voltage VDSX 12 - Gate 1 to source voltage VG1S - 5 - Gate 2 to source voltage VG2S - 5 - Drain current ID 55 - Allowable power dissipation PD 100 - Channel temperature Tch 125 - Storage temperature Tstg - 55 to +150 M-281 V V V m A m W °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E97939-PS Electrical Characteristics Item Drain cut-off current Symbol IDSX Conditions VDS = 12V VG1S = - 4V VG2S = 0V VG1S = - 4.5V VG2S = 0V VDS = 0V VG2S = - 4.5V VG1S = 0V VDS = 0V VDS = 5V VG1S = 0V VG2S = 0V VDS = 5V ID = 100µA VG2S = 0V VDS = 5V ID = 100µA VG1S = 0V VDS = 5V ID = 10m A VG2S = 1.5V f = 1k Hz VDS = 5V ID = 10m A VG2S = 1.5V f = 1MHz VDS = 5V ID = 10m A VG2S = 1.5V f = 900MHz Min. Typ. (Ta = 25°C) Max. 50 Unit µA Gate 1 to source current IG1SS - 8 µA Gate 2 to source current IG2SS - 8 µA Drain saturation current IDSS 35 m A Gate 1 to source cut-off...